Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy
School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
Nanoscale Research Letters 2006, 1:32-45 doi:10.1007/s11671-006-9017-5Published: 26 July 2006
One of the main directions of contemporary semiconductor physics is the production and study of structures with a dimension less than two: quantum wires and quantum dots, in order to realize novel devices that make use of low-dimensional confinement effects. One of the promising fabrication methods is to use self-organized three-dimensional (3D) structures, such as 3D coherent islands, which are often formed during the initial stage of heteroepitaxial growth in lattice-mismatched systems. This article is intended to convey the flavour of the subject by focussing on the structural, optical and electronic properties and device applications of self-assembled quantum dots and to give an elementary introduction to some of the essential characteristics.