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Open Access Nano Review

Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation

SF Yoon*, CY Liu, ZZ Sun and KC Yew

Author Affiliations

Compound Semiconductor and Quantum Information Group School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, 639798, Rep. of Singapore

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Nanoscale Research Letters 2006, 1:20-31  doi:10.1007/s11671-006-9009-5


The electronic version of this article is the complete one and can be found online at:


Published:26 July 2006

© 2006 to the authors

Abstract

Self-assembled GaInNAs quantum dots (QDs) were grown on GaAs (001) substrate using solid-source molecular-beam epitaxy (SSMBE) equipped with a radio-frequency nitrogen plasma source. The GaInNAs QD growth characteristics were extensively investigated using atomic-force microscopy (AFM), photoluminescence (PL), and transmission electron microscopy (TEM) measurements. Self-assembled GaInNAs/GaAsN single layer QD lasers grown using SSMBE have been fabricated and characterized. The laser worked under continuous wave (CW) operation at room temperature (RT) with emission wavelength of 1175.86 nm. Temperature-dependent measurements have been carried out on the GaInNAs QD lasers. The lowest obtained threshold current density in this work is ∼1.05 kA/cm2from a GaInNAs QD laser (50 × 1,700 µm2) at 10 °C. High-temperature operation up to 65 °C was demonstrated from an unbonded GaInNAs QD laser (50 × 1,060 µm2), with high characteristic temperature of 79.4 K in the temperature range of 10–60 °C.

Keywords:
GaInNAs; Quantum dot; Laser diodes; Molecular beam epitaxy (MBE)

Nano Review

[1-53]

Acknowledgments

The authors are grateful to A*STAR for providing financial support in this research through the ONFIG-II program. TEM support from Tung Chih-Hang, Du An Yan and Doan My The of the Institute of Microelectronics, Singapore, as well as discussions with Prof. B.X. Bo of Changchun University of Science and Technology, Dr Mei Ting, Nie Dong, and Dr Tong Cunzhu of the School of Electrical and Electronic Engineering, Nanyang Technological University, is acknowledged.

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